Aim of this research is the achievement of bandgap and strain engineering in Si-based heterostructures. Epitaxial architectures based on Ge and III-V materials have been addressed in detail to obtain quantitative insight into fundamental phenomena, namely quantum confinement and strain relaxation in low dimensional systems. Within this framework, we chiefly focused investigations on the vibrational properties, carrier dynamics and radiative recombination mechanisms. A unique approach based on site-controlled micron-sized crystals grown on patterned Si substrates has been assessed in order to control and manage plastic strain relaxation and defect nucleation. These investigations hold the promise to lead to important and novel developments in basic semiconductor physics and device technology.
– Isa, F., et al.: Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures (2016). Advanced Materials 28, 884.
– Pezzoli, F., Giorgioni, A., Patchett, D., Myronov, M: Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers (2016). ACS Photonics 3, 2004.